Description: IRF530 IRF530N TO-220 "IR" MOSFET N-Channel 17A 100V Description IRF530 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Features:- • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 100V Continuous Drain Current (Id) 5.6A Drain-Source Resistance (Rds On) 540mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 8.3 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 43W
Price: 7.95 USD
Location: Los Angeles, California
End Time: 2024-08-05T01:21:04.000Z
Shipping Cost: 0 USD
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Item Specifics
Return shipping will be paid by: Buyer
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
Mounting Style: Through-Hole
Configuration: Single
Number of Elements per Chip: 1
Package/Case: TO-220
MPN: IRF530N
Transistor Category: MOSFET
Minimum Operating Temperature: -55 °C (-67 °F)
Brand: International Rectifier
Series: IRF
Type: N-Channel MOSFET
Maximum DC Collector Current: 17 A
Number of Pins: 3
Packaging: Bulk
Maximum Operating Temperature: 175 °C (347 °F)
Country/Region of Manufacture: China
